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| hexfet ? power mosfet sot-223 auirll024z s d g gds gate drain source features advanced process technology ultra low on-resistance logic level gate drive 150c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * descriptionspecifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest pro- cessing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive ava- lanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ parameter units i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c thermal resistance parameter typ. max. units r ja junction-to-ambient (pcb mount, steady state) CCC 45 c/w r ja junction-to-ambient (pcb mount, steady state) CCC 120 2.8 38 21 see fig.12a, 12b, 15, 16 max. 5.0 4.0 40 -55 to + 150 1.0 0.02 16 v (br)dss 55v r ds(on) typ. 48m max. 60m i d 5.0a automotive grade !" form quantity tube 95 auirll024z tape and reel 2500 AUIRLL024ZTR base part number package type standard pack orderable part number auirll024z sot-223 downloaded from: http:/// !" repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 4.8mh r g = 25 , i as = 3.0a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population,starting t j = 25c, l = 4.8mh, r g = 25 , i as = 3.0a, v gs =10v. when mounted on 1 inch square copper board. when mounted on fr-4 board using minimumrecommended footprint. s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.049 CCC v/c CCC 48 60 r ds(on) static drain-to-source on-resistance CCC CCC 80 m CCC CCC 100 v gs(th) gate threshold voltage 1.0 CCC 3.0 v gfs forward transconductance 7.5 CCC CCC s i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 200 na gate-to-source reverse leakage CCC CCC -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 7.0 11 q gs gate-to-source charge CCC 1.5 CCC nc q gd gate-to-drain ("miller") charge CCC 4.0 CCC t d(on) turn-on delay time CCC 8.6 CCC t r rise time CCC 33 CCC ns t d(off) turn-off delay time CCC 20 CCC t f fall time CCC 15 CCC c iss input capacitance CCC 380 CCC c oss output capacitance CCC 66 CCC c rss reverse transfer capacitance CCC 36 CCC pf c oss output capacitance CCC 220 CCC c oss output capacitance CCC 53 CCC c oss eff. effective output capacitance CCC 93 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 5.0 (body diode) a i sm pulsed source current CCC CCC 40 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 15 23 ns q rr reverse recovery charge CCC 9.1 14 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ? = 1.0mhz v gs = 0v, v ds = 0v to 44v t j = 25c, i f = 3.0a, v dd = 28v conditions di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 3.0a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c mosfet symbol v dd = 28v i d = 3.0a r g = 56 t j = 25c, i s = 3.0a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 5.0v v gs = 0v v ds = 25v v gs = 5.0v, i d = 3.0a v gs = 4.5v, i d = 3.0a v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 44v, ? = 1.0mhz v ds = 25v, i d = 3.0a i d = 3.0a v ds = 44v v gs = 16v v gs = -16v v gs = 5.0v downloaded from: http:/// # !" fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 9.0v 7.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v 60 s pulse width tj = 25c 3.0v 0 2 4 6 8 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 10v 60 s pulse width 024681 01 2 i d ,drain-to-source current (a) 0 2 4 6 8 10 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 150c v ds = 10v 300 s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.0v 60 s pulse width tj = 150c vgs top 10v 9.0v 7.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v downloaded from: http:/// !" fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 012345678 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v v ds = 28v v ds = 11v i d = 3.0a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-to-drain voltage (v) 0 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1.0 10 100 1000.0 v ds , drain-to-source voltage (v) 0.0001 0.001 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100 sec t a = 25c tj = 150c single pulse dc downloaded from: http:/// $ !" fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 1 2 3 4 5 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 3.0a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 5.3396 0.00080519.881 0.706300 19.771 20.80000 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri downloaded from: http:/// ! !" q g q gs q gd v g charge fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.0a 0.80a bottom 0.69a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a downloaded from: http:/// % !" fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 tav (sec) 0.01 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 starting t j , junction temperature (c) 0 5 10 15 20 25 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 3.0a downloaded from: http:/// & !" fig 17. for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ' ($' ) * )++ + - + + + - - - ' ? ? ! "#"" ? $ % % ? "#""& # v ds 90%10% v gs t d(on) t r t d(off) t f ' '( 1 ) $ 0.1 % ' ,- ' + - ' fig 18a. switching time test circuit fig 18b. switching time waveforms downloaded from: http:/// . !" / 0 ll024z date code y= year ww= work week a= automotive, lead free downloaded from: http:/// !" ! / 0 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min. 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) max. 14.40 (.566) 12.40 (.488) 4 4 downloaded from: http:/// !" !" # http//www.irf.com/ $ %&' % %( qualification information ? sot-223 msl1 rohs complia nt yes es d machine model class m1b (+/- 100v) ?? aec-q101-002 human body model class h0 (+/- 250v) ?? aec-q101-001 charged device model class c5 (+/- 1125v) ?? aec-q101-005 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level downloaded from: http:/// !" ! "#$ % & ' # ( ) ) * ' ' % +% ' * , ' - ( % , ( . / , / - % ( , 0 1 2 # 12# .1 1 12# ' / 12# - ' / ) ' .0&*.34565' "#$ / - ' ) & '' *' !& + &'#"""( ( ,& - 12+ 3+ "4* "5 .$ -6/#0$7%$ downloaded from: http:/// # !" date comments ? added "logic level gate drive" bullet in the features section on page 1 ? updated part marking on page 9 ? updated data sheet with new ir corporate template revision history 3/26/2014 downloaded from: http:/// |
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